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hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 1 general description the hmf 2 m32 b4v is a high - speed flash read only memory (from) module containing 4,194,304 words organized in a x32bit configuration. the module consists of four 1m x 16 from mounted on a 72 - pin so - dimm type , single - sided, fr4 - printed circuit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine, which controls the erase and programming circuitry. write cycles also intern ally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from 12.0v flash or eprom devices. output enable (/oe) and write enable (/we) can set the memory input and output. the host system can detect a program or erase operation is complete by observing the ready pin, or reading the dq7(data # polling) and dq6(toggle) status bits. when from module is disable condition the module is becoming power standby mode, system designer can get low - power design. all module components may be powered from a single + 3.0 v dc power supply and all inputs and outputs are lv ttl - compatible. features pin assignment f lash - rom m odule 8 mbyte ( 2 m x 32bit) , 72pin - so - dimm, 3.3v design part no. hmf 2 m32 b4v pin symbol pin symbol pin symbol pin symbol 1 vss 21 dq15 41 dq29 61 a8 2 /reset 22 nc (/ce_4l) 42 dq30 62 a7 3 dq0 23 nc (/ce_3h) 43 dq31 63 a6 4 dq1 24 dq16 44 nc 64 a5 5 dq2 25 d q17 45 nc (/ce_4h) 65 a4 6 dq3 26 dq18 46 nc (/ce_3h) 66 a3 7 dq4 27 dq19 47 a19 67 a2 8 dq5 28 dq20 48 /oe 68 a1 9 dq6 29 dq21 49 /we 69 a0 10 vcc 30 vcc 50 a18 70 a20 11 dq7 31 dq22 51 a17 71 nc 12 /ce_1l 32 dq23 52 a16 72 vss 13 /ce_2l 33 /ce_1h 53 a15 14 dq8 34 /ce_2h 54 a14 15 dq9 35 dq24 55 a13 16 dq10 36 dq25 56 a12 17 dq11 37 dq26 57 a11 18 dq12 38 dq27 58 a10 19 dq13 39 vss 59 vcc 20 dq14 40 dq28 60 a9 w access time: 70, 80, 90 , 120ns w high - density 8 mbyte design w high - reliability, low - power design w single + 3.0 v 0.5v power supply w all in / outputs are lv ttl - compatible w fr4 - pcb design w minimum 1 ,0 00,000 write/erase cycle w sector erases architecture options marking w timing 70 n s access - 70 80 n s access - 80 90 n s access - 90 120 n s access - 120 w packages 72 - pin so - di mm b
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 2 functional block dia gram dq0 - dq31 a0 C a 19 32 a0 - 19 /we / oe dq 0 - 15 /ce u1 ry - by / reset a0 - 19 /we /oe dq 15 - 31 / ce u 3 ry - by / reset / we 20 / oe /c e _2h /ry_by /reset a0 - 19 /we /oe dq 0 - 15 /ce u 2 ry - by / reset a0 - 19 /we /oe dq 15 - 31 /ce u 4 ry - by / reset /ce_ih /ce_il /ce_2l
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 3 truth table mode /oe /ce /we /reset dq ( /byte=l ) power standby x h x vcc 0.3v high - z standby not selected h l h h high - z active read l l h h d out active write or erase x l l h d in active note : x means don t care absolute maximum ratings parameter symbol rating volt age with respect to ground all other pins v in,out - 0. 5 v to vcc+0.5 v voltage with respect to ground vcc v cc - 0.5 v to + 4 .0v storage temperature t stg - 65 o c to +1 50 o c operating temperature t a - 55 o c to +125 o c w stresses greater than those listed under " absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not i mplied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended dc opera ting conditions parameter symbol min typ . max vcc for 10% device supply voltages vcc 2.7v 3.6v ground v ss 0 0 0 dc and op erating characterist ics ( 0 o c t a 70 o c ) parameter test conditions symbol min max unit input load current vcc=vcc max, v in = gnd to vcc i l1 1.0 m a output leakage current vcc=vcc max, v out = gnd to vcc i l0 1.0 m a output high voltage i oh = - 2. 0 ma, v cc = vcc min v oh 2.4 v output low voltage i ol = 4.0 ma, vcc =vcc min v ol 0.45 v 5mhz 18 32 vcc active read current (1) /ce = v il , /oe = v ih , 1mhz i cc1 4 8 ma vcc active write curren t (2) /ce = v il , /oe=v ih i cc2 40 60 ma vcc standby current /ce , /reset=vcc 0.3v i cc3 60 ma low vcc lock - out voltage v lko 2.3 2.5 v notes : 1. the i cc current listed is typically less than 2ma/mhz, with /oe at v ih . 2 . i cc active while embedded algorithm (program or erase) is in progress 3. maximum icc current specifications are tested with vcc=vcc max
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 4 erase and programmin g performance limits parameter min. typ. max. unit comments sector erase time - 0.7 15 sec chi p erase time 25 sec excludes 00h programming prior to erasure byte programming time - 9 3 00 m s chip programming time - 18 54 sec excludes system - level overhead tsop capacitance parameter symbol parameter descrip tion test setup min max unit c in input capacita nce v in = 0 6 7.5 pf c out output capacitance v out = 0 8 .5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf notes : test conditions t a = 25 o c, f=1.0 mhz. ac characteristics u read only operations characteristics parameter symbols s peed options jedec standard description test setup - 70 r - 80 - 90 - 120 unit t avav t rc read cycle time min 70 80 90 120 ns t avqv t acc address to output delay /ce = v il /oe = v il max 70 80 90 120 ns t elqv t ce chip enable to output delay /oe = v il max 70 80 90 120 ns t glqv t oe chip enable to output delay max 30 30 35 35 ns t ehqz t df chip enable to output high - z max 25 25 30 30 ns t ghqz t df output enable to output high - z max 25 25 30 30 ns t axqx t qh output hold time from addres ses, /ce or /oe, whichever occurs first min 0 ns test specifications test condition 70r, 80 90, 120 unit output load 1ttl gate output load capacitance,c l (including jig capacitance) 30 100 pf input rise and full times 5 ns input pulse levels 0.0 - 3 .0 v input timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 5 u erase/program operations parameter symbols s peed options jedec standard description 70r 80 90 120 unit t avav t wc write cycle time min 70 80 90 12 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time min 35 35 4 5 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl rea d recover time before write min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 35 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 byte programming operation typ 9 m s t whwh2 t whwh2 sector erase operation (note1) typ 0.7 sec t v cs vcc set up time min 50 m s notes : 1 . this does not include the preprogramming time 2 . this timing is only for sector protect operations 5.0v device under test 2.7k w diodes = in3064 or equivalent 6.2k w in3064 or equivalent c l note : c l = 100pf including jig capacita nce
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 6 u erase/program operations alternate /ce controlled writes parameter symbols s peed options jedec standard description - 70r - 80 - 90 120 unit t avav t wc write cycle time min 70 80 90 12 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time min 35 35 4 5 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recover time before write min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 35 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 byte programming operation typ 9 m s t whwh2 t whwh2 sector erase operation (note1) typ 0.7 sec notes : 1. this does not include the preprogramming ti me 2 . this timing is only for sector protect operations u read operations timing
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 7 u reset timing u program operations timing alternate / we controlled writes
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 8 alternate / ce controlled writes u chip/block e rase operation timings
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 9 u data# polling times during internal routine operation u ry_ /by timeing during erase / program operation
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 10 u toggle# bit during internal routine operation
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 11 package dimensions 1.0 0.1mm 2 . 2 mm max
hanbit hmf 2 m32 b4v url : www.hbe.co.kr hanbit electronics co., ltd. rev.02(august,2002) 12 o r dering information part number density org. package component number vcc speed HMF2M32B4V - 70 8mbyte 2mx 32 72pin C sodimm 4ea 3.3v 70ns HMF2M32B4V - 80 8mbyte 2mx 32 72pin C sodimm 4ea 3.3v 80ns HMF2M32B4V - 90 8mbyte 2mx 32 72pi n C sodimm 4ea 3.3v 90ns HMF2M32B4V - 120 8mbyte 2mx 32 72pin C sodimm 4ea 3.3v 120ns

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